Secondary Ion Mass Spectrometry (SIMS)
Secondary Ion Mass Spectrometry (SIMS) detects very low concentrations of dopants and impurities. The technique provides elemental depth profiles over a wide depth range from a few angstroms (Å) to tens of micrometers (µm). The sample surface is sputtered/etched with a beam of primary ions (usually O2+ or Cs+) while secondary ions formed during the sputtering process are extracted and analyzed using a mass spectrometer (quadrupole , magnetic sector or Time of flight.) The secondary ions can range in concentration from matrix levels down to sub-ppm trace levels.
EAG is the industry standard for SIMS analysis, offering the best detection limits along with accurate concentration and layer structure identification. EAG’s depth and scope of experience and commitment to research and development in the SIMS field is unrivaled. EAG has the largest range of Secondary Ion Mass Spectrometry instruments worldwide (more than 40) and staffed by exceptionally qualified scientists. EAG also has the world’s largest reference material library of ion-implanted and bulk-doped standards for accurate SIMS quantification.
EAG’s SIMS scientists are specially trained and are adept at understanding our client’s analytical needs and optimizing analyses to most effectively address their concerns and interests. Today, SIMS analysis is used to help customers across a variety of industries for research and development, quality control, failure analysis, troubleshooting, and process monitoring. EAG provides personal service throughout the process to allow a complete understanding of the SIMS lab test results.
SIMS Tutorial: Instrumentation
SIMS Tutorial: Theory