- Material characterization – Crystalline Defects, Bandgap determination, Intra-bandgap trap states, Composition, Dopants
- Semiconductor Failure Analysis – Defect localization within devices for deeper failure analysis (FA)
Cathodoluminescence (CL) is electromagnetic radiation, or light, ranging from visible (VIS) to near-infrared (NIR), created by the interaction of high energy electrons (cathode rays) with a luminescent material. The light that is emitted carries very specific information about the optical and electronic properties of the sample.
Using a specialized Scanning Electron Microscope (SEM), that has visible light collection, corresponding sample structure (SE) and CL emission maps can be acquired simultaneously with sub micrometer resolution. In some cases, the CL spatial resolution can be as good as 30-50nm. CL mapping can be performed on both cross-sections (XS) or in plan-view (PV) to characterize a sample’s localized composition, doping, structure, and defects all with very high spatial resolutions.
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